摘要
Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of （002） and （102） direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.
Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of （002） and （102） direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.
