摘要
介绍了溶胶-凝胶法制备掺Dy元素的Bi4Ti3O12(Bi3.4Dy0.6Ti3O12,BDT)薄膜的工艺过程,并研究了不同预退火气氛对沉积在Pt/Ti/SiO2/Si基片上的BDT薄膜铁电性能的影响。空气中的预退火,薄膜中的H,C等有机成分分解不彻底,有部分残留在薄膜中;而O2气氛下的预退火,由于O2充足,薄膜中的有机成分可以完全分解。退火过程中BDT薄膜晶粒的生长和取向可以受到残留的有机成分的影响,进而对BDT薄膜的铁电性有较为显著的影响。在外加400kV/cm的电场时,空气中预退火的BDT薄膜的剩余极化(2Pr)值和矫顽场(Ec)分别为26.37μC/cm2和114.2kV/cm,而O2气氛下预退火的BDT薄膜的2Pr和Ec分别为36.28μC/cm2和113.6kV/cm,表明O2气氛下预退火可显著提高BDT薄膜的剩余极化值,改善其铁电性能。
The sol-gel process of Dy-doped Bi4Ti3O12 （Bi3.4Dy0. 6Ti3O12, BDT） films was intro- duced. The effect of different pre-annealing atmospheres on the ferroelectrieity of BDT films deposited on Pt/Ti/SiO2/Si substrates was investigated. The pyrolysis of organic components was incomplete during the pre-annealing process in air, hydrogen and carbon organic species as residues partly remained in the BDT film. However, after the film was pre-annealed in adequate O2, the organic components were pyrolysed completely and all the gas state products were volatilized. The residual organic components can affect the grain growth and erystallite orientation in BDT films during the annealing, and hence have an appreciable impact on the ferroelectric properties of BDT films. Under the 400 kV/cm electric field, the remnant polarization （2Pr） and coercive field （Ec） values of the BDT films are 26.37 μC/cm2 and 114.2 kV/cm as pre-annealed in the air, and are 36.28 μC/cm2 and 113.6 kV/cm as pre-annealed in O2, respectively. Obviously, the 2Pr value of the BDT film pre-annealed in O2 is enhanced evidently, thus the ferroelectric property of the BDT film is also improved.
出处
《微纳电子技术》
CAS
北大核心
2011年第1期37-39,57,共4页
Micronanoelectronic Technology
基金
湖南省教育厅科研基金资助项目(08C229)
