摘要
薄膜表面形貌定量研究有助于薄膜生长机理的认识。研究的薄膜是用激光脉冲沉积法(PLD)制备的ZnO∶Ga(GZO)透明导电薄膜。由于GZO薄膜的生长是在远离平衡态情况下实现的,具备自仿射分形特征,可以用高度-高度相关函数进行描述。通过对用原子力显微镜(AFM)获得的表面高度数据进行相关运算,定量地分析了PLD制备的GZO薄膜的生长界面特征,求出了描述粗糙表面的高度-高度相关函数的三个重要参量W,ξ和α,发现制备的GZO薄膜生长符合Kuromoto-Sivashinsky生长模型。
The quantitative study on the film surface morphology is important for the understanding of thin film growth mechanism.The ZnO∶Ga（GZO） transparent conductive film is prepared by pulsed laser deposition（PLD）.Since this GZO film growth is far from equilibrium,the GZO film has self-affine fractal characteristics and can be described by height-height correlation function H（r,r＋ρ）.By using atomic force microscope to get the height data of the surface image,the quantitative analysis of height-height correlation function of the GZO film prepared by PLD is carried out.The values of the three important parameters W,ξ and α are measured and it is suggested that the growth of GZO thin film is consistent with Kuromoto-Sivashinsky growth model.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2011年第1期272-276,共5页
Acta Optica Sinica
基金
国家自然科学基金(10874105
10974122)
山东省自然科学基金(ZR2009FZ006)资助课题
