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CVD法SiC纤维沉积过程的正交试验研究

Research on orthogonal experiment for CVD deposition process of SiC filament
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摘要 采用正交设计方法对CVD法制备SiC纤维的工艺过程进行了分析和研究。在CVD法SiC纤维沉积过程中,主要考虑了5种工艺因素和4个水平,计算了不同工艺因素条件下的方差,分析了各自影响的显著性。找出影响SiC纤维抗拉强度工艺因素的主次顺序,并讨论了主要工艺因素对沉积过程的影响机理。 Orthogonal design method was used to analyse and study deposition process of SiC filament prepared by CVD method. Five process factors and four levels were focused on during the experiment design. Variance of five process factors to deposition process of SiC filament by CVD method were calculated and each factors' sig nificance was analyzed. The sequences of factors influencing tensile strength of SiC filament was discovered and the main factors was analyzed how to affect the deposition process of SiC filament.
出处 《功能材料》 EI CAS CSCD 北大核心 2011年第B02期89-91,共3页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50871086)
关键词 SIC纤维 CVD 正交实验 抗拉强度 SiC filament~ CVD orthogonal experiment tensile strength
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