期刊文献+

飞秒激光与宽带隙材料相互作用机理研究 被引量:10

Interaction mechanism of femtosecond laser and wide band-gap material
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摘要 应用处于近红外区域波段的飞秒激光对宽带隙材料SiC的烧蚀机理及其相互作用过程进行了研究。分别采用扫描电子显微镜(SEM)、表面粗糙度轮廓仪(Talysurf)和光学显微镜(OM)等分析技术对烧蚀区和未烧蚀区的表面微观形貌进行了检测和评价。不仅在烧蚀表面观察到了烧蚀区、定向波纹区和改性区等不同形貌特征,而且对加工阶段进行分离,并求出加工SiC时强烧蚀和弱烧蚀的阈值分别为0.13 J/cm2和0.61 J/cm2。根据实验结果得到了加工参数与烧蚀形貌之间的映射关系,发现入射激光的能量是决定材料去除方式的关键参数。 The material ablation mechanisms and ablation interaction procedure were studied between the near-infrared femtosecond laser and the wide band-gap hard material SiC.Surface analytical technologies were used,such as Scanning Electro Microscopy(SEM),Talysurf and Optical Microscopy(OM),to test and evaluate the surface morphology of untreated and treated regions of the material.The damaged regions exhibited three different zones,named modification,oriented ripples and ablation.By separating the ablation processes in detail,thresholds for gentle and strong ablation stages were 0.13 J/cm2 and 0.61 J/cm2,respectively.The relationship between processing parameters,and the micro-topography was also gained.It is found that the energy of incident laser is the key parameter for deciding ablation way.
出处 《红外与激光工程》 EI CSCD 北大核心 2010年第6期1044-1048,共5页 Infrared and Laser Engineering
基金 国家自然科学基金资助项目(50675051) 科技重大专项资助项目(2009ZX04001-101)
关键词 飞秒激光 SIC 烧蚀阈值 材料去除机理 Femtosecond laser SiC Ablation threshold Material ablation mechanisms
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参考文献10

  • 1陈洪新,贾天卿,黄敏,赵福利,许宁生,徐至展.飞秒激光的波长对SiC材料烧蚀的影响[J].光学学报,2006,26(3):467-470. 被引量:23
  • 2UHLMANN E.Development in grinding of ceramic materials] J].Abrasive Magazine,1998:28-34.
  • 3DONG Y,MOLIAN P.Femtosecond pulsed laser ablation of 3C-SiC thin film on silicon[J].Appl Phys A,Materials Science Processing,2003,77:839-846.
  • 4CHICHKOV B N,MOMMA C,NOLTE S,et al.Femtosecond,picosecond,and nanosecond laser ablation of solids[J].Appl Phys A,1996,63(2):109-115.
  • 5ZOPPEL S,FARSARI M,MERZ R,et al.Laser micro machining of 3C-SiC single crystals[J].Microelectronic Engineering,2006,83:1400-1402.
  • 6张楠,梁艳梅,王明伟,王晓雷,杨建军,刘伟伟,朱晓农.高强度飞秒激光脉冲烧蚀固体靶材的超快动力学过程的研究[J].中国基础科学,2008,10(1):21-23. 被引量:2
  • 7BONSE J,BAUDACH S,KRUGER J,et al.Femtosecond laser ablation of silicon -modification thresholds and morphology[J].Appl Phys A,2002,74:19-25.
  • 8ZHOU G S,FAUCHET P M,SIEGMAN A E.Growth of Spontaneous Periodic Surface Structures on Solids during Laser Illumination[J].Physical Review B,1982,26(10):5366-5381.
  • 9JESCHKE H O,GARCIA M E,LENZNER M,et al.Laser ablation thresholds of silicon for different pulse durations:theory and experiment[J].Appl Surf Sd,2002,197-198:839-844.
  • 10DONG Y Y,ZORMAN C,MOLIAN P.Femto-second pulsed laser micro-machining of single crystalline 3C-SiC structures based on laser-induced defect-activation process[J].Journal of Micromechanics and Microengineering,2003,13:680-685.

二级参考文献24

  • 1Anita Lloyd Spetz, Peter Tobias, Amir Baranzahi at al.. Current status of silicon carbide based high-temperature gas sensors[J].IEEE Trans. Electron Device, 1999, 46(3): 561-566
  • 2Jia T Q, Xu Z Z, Li X X et al.. Microscopic mechanisms of ablation and mieromachining of dielectrics by using femtosecond lasers[J]. Appl. Phys. Lett., 2003, 82(24): 4382-4384
  • 3T. Q. Jia, Z. Z. Xu, X. X. Li et al.. Mechanisms in fs-laser ablation in fused silica[J]. J. Appl. Phys., 2004, 95(9):5166-5171
  • 4Guanghua Cheng, Yishan Wang, J. D. White et al..Demonstration of high-clensity three-dimensional storage in fused silica by femtoseeond laser pulses[J]. J. App. Phys. , 2003, 94(3): 1304-1307
  • 5Yuanyuan Dong, Pal Molian. Femtosecond pulsed laser ablation of 3C-SiC thin film on silicon[J]. Appl. Phys. A, 2003, 77:839-846
  • 6Yuanyuan Dong, Pal Molian. Coulomb explosion-induced formation of highly oriented nanoparticles on thin films of 3C-SiC by the femtoseeond pulsed laser[J]. Appl. Phys. Lett. , 2004,84(1): 10-12
  • 7D. M. Simanovskii, H. A. Schwettman, H. Lee at al..Midinfrared optical breakdown in transparent dielectrics [J].Phys. Rev. Lett., 2003, 91(10): 107601-1-10760-4
  • 8Harald O. Jeschke, Martin E. Garcia, Matthias Lenzner at al..Laser ablation thresholds of silicon for different pulse durations: theory and experiment[J]. Appl. Surf. Sci. , 2002, 197-198:839-844
  • 9B. C. Stuart, M. D. Fiet, A. M. Rubenchik et al.. Laserinduced damage in dielctrics with nanosecond to subpicosecond pulses[J]. Phys. Rev. Lett., 1995, 74(12): 2248-2251
  • 10M. Lenzner, J. Kruger, S. Sartania et al.. Femtosecond optical breakdown in dielectrics[J]. Phys. Rev. Lett. , 1998, 80(18):4076-4079

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