摘要
In the present work, sapphire single crystals were implanted with 110 keV He ions at 320 and 600 K temperature to doses ranging from (0.5 to 2)×1017 ions/cm2, and some of them were subsequently irradiated at 300 K with 208pb27+. These samples were investigated by using PL (λex=340 nm) and FTIR spectroscopy, and the PL characters of the samples were studied. For He ion implanted sapphire, the obtained PL
In the present work, sapphire single crystals were implanted with 110 keV He ions at 320 and 600 K temperature to doses ranging from （0.5 to 2）× 1017 ions/cm2, and some of them were subsequently irradiated at 300 K with 208Pb27＋. These samples were investigated by using PL （λex=340 nm） and FTIR spectroscopy, and the PL characters of the samples were studied. For He ion implanted sapphire,
