摘要
用金属有机物气相外延（ Ｍ Ｏ Ｖ Ｐ Ｅ）方法在蓝宝石衬底上生长了不同厚度和不同退火过程的氮化镓（ Ｇａ Ｎ）缓冲层，以及在缓冲层上继续生长了 Ｇａ Ｎ 外延层．研究了这些缓冲层的结晶学、表面形貌和光学性质以及这些性质对 Ｇａ Ｎ 外延层的影响． 提出了一个模型以解释用 Ｍ Ｏ Ｖ Ｐ Ｅ 方法在蓝宝石衬底上生长 Ｇａ Ｎ
Low\|temperature\|deposited GaN buffer layers with different thicknesses,as\|grown or annealed,and GaN epilayers on the buffer layers have been grown by metalorganic vapor phase epitaxy(MOVPE).The crystallographic,morphologic and optical properties of the GaN buffer layers as well as the influence of these properties on the GaN epilayers have been studied.A model is proposed to interpret the most suitable thickness of GaN buffer layer for GaN epilayer on sapphire grown by MOVPE.
基金
国家"863"高技术计划
国家自然科学重点基金
