摘要
在不同剂量率的60Coγ辐照下，研究了PMOS剂量计阈值电压的响应关系。借助快速I—V亚阈分析技术，获得了辐射感生界面态对剂量率效应的贡献。结果表明，辐照响应有较明显的剂量率效应；主要表现为响应的拟合关系式△VT＝KDn中幂n的变化，在低剂量率区间内，n值较大，对应于辐射响应高灵敏度范围；当剂量率增大时，n值减小，响应灵敏度下降。讨论了克服剂量率效应影响其应用的办法。
Response of PMOS dosimeter to total dose has been studied under ionizingradiation with 60Co γ-rays. The results showed that there was an obviousdependence of △ VT on dose rate. By means of I- V subthreshold curve measurementthe contribution of irradiation induced interface state positive charge to the dose rateeffects was found and the relationship of total threshold voltage shift △ VT and dosewas KDn. The power n decreased with increasing dose rate.
出处
《核技术》
CAS
CSCD
北大核心
1999年第8期508-512,共5页
Nuclear Techniques
基金
中国科学院院长基金
