摘要
利用真空电子束蒸发技术,通过改变Al的蒸发速率在P型〈1 0 0〉晶向的单晶硅片上制备了两种不同平整度的Al膜,在草酸中对它们分别进行一次阳极氧化,研究Al膜平整度对硅基AAO(多孔硅基氧化铝)有序度的影响.结果表明,硅基AAO的有序度对Al膜的平整度有很大的依赖性,硅基Al膜的平整度越高,所获得的硅基AAO的有序度就越好.另外,对平整度较差的Al膜进行二次阳极氧化可以显著地改善硅基AAO的有序度.
Using vacuum electron beam evaporation technology,two kinds of different smoothness of Al films had been prepared through changing the rate of evaporation Al on P-type 〈1 0 0〉 Si substrate.The Al films were treated with a one-step anodization process in oxalic acid,and then research findings showed that anodic oxidation film flatness had an effect on Al silicon-based AAO（anodic aluminum oxide） order degrees.The results showed that the flatness of Al film largely determined the order of silicon-based AAO.The higher the smoothness of silicon-based Al films is,the better the silicon-based AAO degree of order is obtained.In addition,the results display that the order degree of the silicon-based AAO has been significantly improved by using two-step anodization.
出处
《武汉大学学报（理学版）》
CAS
CSCD
北大核心
2011年第1期38-42,共5页
Journal of Wuhan University:Natural Science Edition
基金
天津市自然科学基金(09JCYBJC04400)资助项目
