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Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN
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摘要 This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details. This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第3期455-459,共5页 中国物理B(英文版)
基金 supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002) the Major Programand Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033) the Chinese Advance Research Program of Science and Technology (Grant Nos. 51308040301,51308030102,51311050112,and 51323030207)
关键词 N-polar GaN yellow luminescence KOH etching N-polar GaN, yellow luminescence, KOH etching
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  • 1Strite S and Morkoc H 1992 J. Vac. Sci. Technol. B 10 1237.
  • 2Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1996 Appl. Phys. Lett. 69 3034.
  • 3Kuramata A, Domen K, Soejima R, Horino K, Kubota S I and Tanahashi T 1997 Jpn. J. Appl. Phys. (Part 2) 36 1130.
  • 4Fan Z, Mohammad S N, Aktas O, Botchkarev A E, Sal- vador A and Morkoc H 1996 Appl. Phys. Lett. 69 1229.
  • 5Reshchikov M A and Morkoc H 2005 J. Appl. Phys. 97 061301.
  • 6Neugebauer J and van de Walle C G 1996 Appl. Phys. Lett. 69 503.
  • 7Colton J S, Yu P Y, Teo K L, Weber E R, Perlin P, Grze- gory I and Uchida K 1999 Appl. Phys. Lett. 75 3273.
  • 8Shi J Y, Yu L P, Wang Y Z, Zhang G Y and Zhang H 2002 Appl. Phys. Lett. 80 2293.
  • 9Armitage R, Hong W, Yang Q, Feick H, Gebauer J and Weber E R 2003 Appl. Phys. Lett. 82 3457.
  • 10Zhao D G, Jiang D S, Yang H, Zhu J J, Liu Z S, Zhang S M and Liang J W 2006 Appl. Phys. Lett. 88 241917.

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