摘要
首次在透射电子显微镜下观察到渗钒层过渡区的形貌,并对过渡区进行了成分分析。发现渗钒层中钒碳化合物晶粒直接生长在基体上面,两者之间有明显的界限,界面两侧元素发生少量互扩散并产生了硅的富集。
The photograph of transition region of vanadized layers was observed by using TEM for the first time and the composition was analysed. The result showed the crystal grains of VC is based on the matrix, and there was a clear bounds between them. Near the boundary, mutual diffusion of elements had happened and enriched silicon.
出处
《物理测试》
CAS
1999年第4期16-18,共3页
Physics Examination and Testing
关键词
盐浴
渗钒
组织
过渡区
salt bath, vanadizing. structure
