摘要
This paper presents the numerical investigation of the effects of momentum, thermal and species boundary layers on the characteristics of polycrystalline silicon deposition by comparing the deposition rates in three chemical vapor deposition （CVD） reactors. A two-dimensional model for the gas flow, heat transfer, and mass transfer was coupled to the gas-phase reaction and surface reaction mechanism for the deposition of polycrystalline silicon from trichlorosilane （TCS）-hydrogen system. The model was verified by comparing the simulated growth rate with the experimental and numerical data in the open literature. Computed results in the reactors indicate that the deposition characteristics are closely related to the momentum, thermal and mass boundary layer thickness. To yield higher deposition rate, there should be higher concentration of TCS gas on the substrate, and there should also be thinner boundary layer of HCl gas so that HCl gas could be pushed away from the surface of the substrate immediately.
这份报纸论述动量的效果的数字调查，热并且由在三化学蒸汽免职(CVD ) 比较免职率的多晶的硅免职的特征上的种类边界层反应堆。为煤气的流动，热转移，和集体转移的一个二维的模型从 trichlorosilane (TCS ) 为多晶的硅的免职被联合到煤气阶段的反应和表面反应机制氢系统。模型被在开的文学把模仿的生长率与试验性、数字的数据作比较验证。在反应堆的计算结果显示免职特征是仔细与动量有关，热、集体的边界层厚度。为了产出更高的免职，评价，应该有底层上的 TCS 气体的更高的集中，并且应该也有 HCl 气体的更薄的边界层以便 HCl 气体能立即从底层的表面被推开。
基金
Supported by the Natural Science Foundation of Shandong Province of China （ZR2009BM011）
the Doctor Foundation of Shandong Province of China （BS2010NJ005）
