摘要
用溶胶-凝胶旋涂法在玻璃基底上制备出Nb/SnO2复合透明导电薄膜,利用XRD,SEM,紫外—可见分光光度计,四探针电阻仪等测试方法对Nb/SnO2复合薄膜的结构和物性进行了研究.结果表明:当Nb含量小于0.99at%时,Nb/SnO2复合薄膜为较纯的四方金红石结构;复合薄膜中晶粒分布均匀,平均尺寸在5—7nm.当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的电阻率先减小后增大,当Nb含量为0.37at%时,复合薄膜的电阻率降低到9.49×10-2Ω·cm.在400—700nm可见光范围内,当Nb含量小于0.99at%时,Nb/SnO2复合薄膜的透过率都在90%以上,其光学带隙在3.9—4.1eV之间;当Nb含量达到1.23at%时,可见光透过率明显降低.
The Nb /SnO2 composite thin films were successfully synthesized by sol-gel spin-coating method on glass substrate. The structures and properties of Nb /SnO2 composite thin films were characterized by X-ray diffraction （ XRD）,scanning electron microscopey （SEM）,ultraviolet visible near-infrared spectrophotometry and four-probe method. The effects of Nb doping on structure and optical-electrical properties of the Nb /SnO2 composite thin films were researched. The results indicate that a tetragonal rutile structure is retained when the Nb content is less than 0. 99at% ,and the nano-particles are distributed homogeneously in the thin films and their size can be controlled in the range of 5—7 nm. The resistivity of Nb / SnO2 composite thin films decreases and then increases when the Nb content is less than 0. 99at% ,and reaches a very low value of 9. 49 × 10^-2 Ω·cm at 0. 37at% Nb. In the range of 400—700 nm visible region,the transmittance of Nb /SnO2 composite thin films is up to 90% when the Nb content is less than 0. 99at% ,and the optical band gap of Nb /SnO2 composite thin films are in the range of 3. 9—4. 1 eV. The visible light transmittance of Nb /SnO2 composite thin films significantly reduce at 1. 23at% Nb.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第3期779-784,共6页
Acta Physica Sinica
基金
航天科学基金(批准号:373858)资助的课题~~
关键词
溶胶-凝胶法
Nb/SnO2复合薄膜
结构表征
光电性能
sol-gel
Nb /SnO2 composite thin films
structure characterization
optical-electrical properties
