摘要
为了提高半导体激光器的抗辐射性能,满足空间应用的需要,在介绍了空间辐射环境的基础上,对空间辐射在半导体激光器中产生的总剂量效应、单粒子翻转效应和位移效应进行了分析,并探讨了半导体激光器在空间辐射环境中相应的抗辐射防护技术。对980 nm单模半导体激光器采用了端面镀膜、Al2O3绝缘介质层、真空封装等抗辐射的改进措施,有效地提高了半导体激光器的抗辐射能力。
In order to improve the performance of radiation resistance of semiconductor lasers for space applications,the space radiation environment was introduced,based on which,total dose effects,single event upset effects and displacement effects were analyzed,and the anti-radiation protection technology was discussed.For the 980 nm single-mode semiconductor lasers,improvements of facet coating,Al2O3 dielectric layers and vacuum packaging were applied to effectively improve the radiation resistance of semiconductor lasers.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第1期30-33,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(60976044)
教育部新世纪优秀人才支持计划项目
高功率半导体激光国家重点实验室基金项目(9140C3104050904)
关键词
半导体激光器
空间辐射
辐射效应
抗辐射
semiconductor lasers
space radiation
radiation effect
radiation resistance
