摘要
A method was developed to estimate EEPROM device life based on the consistency for break- down charge, QBD, for constant voltage time dependent dielectric breakdown （TDDB） and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, △QFG, is measured, the lower limit of the EEPROM life can be related to QBD/△QFG. The method is reached by erase/write cycle tests on an EEPROM.
A method was developed to estimate EEPROM device life based on the consistency for break- down charge, QBD, for constant voltage time dependent dielectric breakdown （TDDB） and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, △QFG, is measured, the lower limit of the EEPROM life can be related to QBD/△QFG. The method is reached by erase/write cycle tests on an EEPROM.
基金
Supported the State Important Sci-Tech Special Projects(2009ZX02306-04)
