摘要
在单晶Si（100）基体上利用电子回旋共振等离子体增强化学气相沉积法制备硅薄膜,并采用X射线衍射谱（XRD）、透射电镜（TEM）、Raman光谱、电子自旋共振（ESR）波谱等实验方法研究了不同Ar流量下硅薄膜微结构及悬挂键密度的变化。XRD及TEM实验结果得出,制备的硅薄膜的晶粒尺寸为12~16 nm,属纳晶硅薄膜。薄膜结晶度随镀膜时Ar流量增大而增大,而悬挂键密度则先迅速减小而后缓慢增大。当Ar流量为70 ml/min（标准状态）时,薄膜的悬挂键密度达到最低值4.42×1016cm-3。得出最佳Ar流量值为70 ml/min。
The Si nano-films were grown by electron cyclotron resonance plasma enhanced chemical vapor deposition（ECR-PECVD） on Si（100） substrates.The impact of argon flow rate on the film growth was studied.The microstructures and variations in dangling bond density were characterized with X-ray diffraction,transmission electron microscopy,and electron spin resonance spectroscopy（ESR）.The results show that the argon flow rate significantly affects the microstructures and dangling bond density of the as-deposited Si nano-films.For example,higher Ar flow rate promotes crystallization.As the Ar flow rate increases,the dangling bond density first rapidly increases to a peak,then,slowly decreases.At 70 ml/min,the dangling bond density minimized to 4.42×1016 cm-3.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2011年第2期178-182,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金委工程与材料学部青年基金(KFJJ200902)
电子薄膜与集成器件国家重点实室开放课题
