摘要
采用CMOS/SIMOX工艺制作1Msam ple/s 8 位A/D转换器。该A/D转换器采用半闪烁型结构,由两个4 位全并行A/D转换器实现8 位转换。电路共有31个比较器,采用斩波稳零型结构,具有结构简单和失调补偿功能。电路由2100 个器件组成,芯片面积为3.53 m m ×3.07 m
A 1Msample/s CMOS/SIMOX 8 bit analog to digital converter is fabricated with CMOS/SIMOX process Half flash structure is used for the A/D converter The 8 bit conversion is realized by two 4 bit flash A/D converters The circuit consists of 31 comparators and adopts chopping stable zero structure With a simple structure, it has the function of offset compensation The device contains of 2100 elements and occupies a chip area of 3 53 mm× 3 07 mm
出处
《微电子学》
CAS
CSCD
北大核心
1999年第6期445-448,共4页
Microelectronics
