摘要
利用Si和C粉末的自蔓延高温合成反应合成SiC陶瓷，研究合成温度对反应产物形貌和组成以及Ni添加剂对合成温度的影响。试验结果表明SiC陶瓷的最低合成温度在1500℃～1600℃之间，添加适量的Ni粉后，可以有效地降低SiC的合成温度。
Si and C powders are used to synthesize SiC ceramic by SHS (Self-propagating High-temperature Synthesis)Process. Not only the influence of synthesis temperature on the morphology and constituent of the resultant, but also the effect of additive Ni on the Synthesis temperature have been studied in this paper. The results show that the synthesis temperature of the SiC ceramic is between 15000℃ and 1600℃, and the synthesis temperature can ha obviously decreased by adding Ni powder as an additive into the reactan.
出处
《粉末冶金技术》
CAS
CSCD
北大核心
1999年第4期264-268,共5页
Powder Metallurgy Technology
基金
航空基础科学基金
中国国家自然科学基金!59881001
