摘要
晶体硅中的杂质或缺陷会显著地影响各种硅基器件的性能。用常规化学腐蚀法显示出单晶硅中的缺陷,观察典型的位错。通过实验发现缺陷分布的一般规律:中间尺寸大,密度小,边缘尺寸小,密度大,验证缺陷对杂质的吸收。
The defects or precipitates in crystalline silicon may influence the properties of different silicon-base devices noticeably.By using the routine chemical corrosion,show the defect of the Monocrystalline Silicon;find the typical linear deranged.The experiment found a general law： minor density and large size in the middle;thick density and small size on the verge part.The experiment also tests and verifies the mechanism of the absorption between the defect and the impurities.
出处
《湖南科技学院学报》
2011年第4期31-33,共3页
Journal of Hunan University of Science and Engineering
基金
永州市2010年度指导性科技项目
关键词
单晶硅
缺陷
化学腐蚀法
消除与控制
Monocrystalline Silicon
Defects
Chemical-corrosion
Control and remove
