摘要
采用0.35μm双栅标准CMOS工艺设计和制备了叶型硅发光器件。叶型硅发光器件由3个楔型器件的组合而成,pn结结构为n阱/p+结。使用奥林巴斯IC显微镜测得了器件的显微图形,并对器件进行了电学特性测试。器件工作在雪崩击穿下,开启电压为8.8 V,能够发出黄色可见光;正向偏置下,器件开启电压为0.8 V。在与已经制备的楔型器件比较时发现,器件发光受串联电阻分压影响,并且有点增强发光现象,这些情况均与器件的电极布局有关。
A leaf-shaped silicon light-emitting device is designed and fabricated with standard 0.35 μm CMOS dual gate technology.The left-shaped light-emitting device includes three wedge-shaped emitting devices,and the pn junction structure is n well/p＋ junction.The device＇s photograph is measured using the Olympus IC microscope,and the electrical properties of devices were tested.The device operates in avalanche breakdown,and the threshold voltage is 8.8 V,which can emit yellow and visible light.Under forward bias condition,the turn-on voltage of the device is 0.8 V.Comparing with the wedge device,the leaf-shaped device is affected by the series resistance divider,and appears an enhanced luminescence on the tip.After analyzing the results,it is obtained that they are related to the layout of electrode.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2011年第4期374-377,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金(60706015)资助项目
关键词
硅LED
CMOS工艺
电极版图
silicon LED
standard CMOS technology
layout of electrode
