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退火温度对MnZn铁氧体薄膜性能的影响 被引量:1

Effect of Annealing Temperature on the Properties of MnZn Ferrite Thin Films
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摘要 采用射频磁控溅射法在Si(111)基片上沉积了MnZn铁氧体薄膜,用X射线衍射仪(XRD)分析薄膜的物相结构,用振动样品磁强计(VSM)测量薄膜面内饱和磁化强度Ms和矫顽力Hc。结果表明:随着退火温度的升高,MnZn铁氧体薄膜的X射线衍射峰强度逐渐增强,且主峰逐渐由(311)峰变为(222)峰,沿(111)面取向生长明显。薄膜的饱和磁化强度和矫顽力均随着退火温度的升高而升高。 MnZn ferrite films were deposited on Si(111)substrate by RF magnetron sputtering.The phase structure was characterized by using X-ray diffractometer(XRD).The in-plane saturation magnetization Ms and coercive force Hc of MnZn ferrite films were measured by vibrating sample magnetometer(VSM).The results showed that as the annealing temperature increased,the intensity of X-ray diffraction peaks enhanced.Simultaneously,the main peak(311)shifted to(222)peak gradually,and the films grew along the(111)plane orientation significantly.Both saturation magnetization and coercive force increased with increasing annealing temperature.
出处 《实验科学与技术》 2011年第2期22-25,共4页 Experiment Science and Technology
关键词 MnZn铁氧体薄膜 射频磁控溅射 相结构 饱和磁化强度 矫顽力 MnZn ferrite film RF magnetron sputtering phase structure saturation magnetization coercive force
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