摘要
小角晶界是Si单晶中的严重缺陷,生产中需要极力避免。对于重掺B直拉<111>Si单晶,当掺杂浓度接近固溶度时就容易产生小角晶界。对直拉Si单晶中小角晶界产生的原因进行梳理及深入分析,在理论上提出减少过冷度来减少小角晶界缺陷的方法。分别采用增加加热器功率减小过冷度及降低埚位减少过冷度的两种工艺方法,成功实现生长无小角晶界重掺B<111>Si单晶。通过生产中实际晶体生长情况对比分析发现,低埚位生长无小角晶界的重掺B直拉<111>Si单晶工艺更具备生产优势。
Low-angle grain boundary is a serious crystal defect and must be avioded.Low-angle grain boundary was easily happened in heavily boron doped 111 czochralski silicon,when the doping concentration near the solid solubility.Influencing factors of low-angle grain boundary were analyzed base on the formation mechanism.The methods of undercooling reduction was proposed from the theoretical analysis.The undercooling was changed by increasing of heating power and reduceing the crucible position.The heavily boron doped 111 czochralski silicon with no low-angle grain boundary was successfully grown by these two methods.Contrasting the actual crystal growth situations in production,the technology of low crucible position has more production advantages to grow heavily doped czochralski B111 silicon with no low-angle grain boundary.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第5期373-377,392,共6页
Semiconductor Technology
关键词
小角晶界
过冷度
硅单晶
重掺硼
掺杂浓度
low-angle grain boundary
undercooling
czochralski silicon
heavily boron doped
doping concentration
