摘要
本文介绍利用国产DK-P290型等离子刻蚀设备完成的多晶硅膜腐蚀技术的研究。利用SF_6作腐蚀剂,可以得到腐蚀速率超过0.1微米/分的均匀腐蚀。每批8个3吋园片,其单片和片间均匀性可达±5％以下。目前我们已将该技术用于所有的硅栅MOS电路的研制之中。在研究侧向腐蚀的过程中,我们还设计了一个不用扫描电镜作工具的实验方法。该法避免了样品的破坏性测量,从而降低了实验成本和测量周期。
A Study on the plasma etching of polysilicon films using China-made DK-P290 etching system is introduced in this paper. A uniform etch with an etching rate over 0.lμm/min. can be obtained by using SF6 as a corrodent. With 8 wafers per batch, the etching uniformities on a wafer and of wafer-to-wafer are below ±5%, At present, this technology has been used in our development and manufacture of silicon gate MOS ICs. In the course of our research into side etching, an experimental method has been designed,which does not require the scanning electron microscope (SEM) and thus can avoid the destructive measurement on the samples,reducing the experiment cost and cutting down the test cycles accordingly.
出处
《微电子学》
CAS
CSCD
1990年第2期52-56,共5页
Microelectronics
关键词
多晶硅膜
等离子刻蚀
硅MOS
Polysilicon film, Plasma etching, Silicon-gate MOS
