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溅射气压对射频磁控溅射制备ZnO薄膜结构的影响

Effect of sputtering pressure on structure of ZnO films deposited by RF magnetron sputtering
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摘要 采用射频磁控溅射技术在玻璃衬底上制备ZnO薄膜。利用X射线衍射仪、原子力显微镜,分析了ZnO薄膜的晶体结构和表面形貌。结果表明:所制备的ZnO薄膜是具有(002)晶面择优生长的多晶薄膜。溅射气压为0.3Pa时,薄膜的晶粒尺寸较大,结晶度提高。 ZnO films are deposited on glass substrates by RF magnetron sputtering technology. The crystal structure and surface morphology of ZnO films are analysed by using X- ray diffraction (XRD) atom force microscope(AFM). The result shows that all the deposited films are polyerystalline, growing preferentially in the (002)crystallographic direction. When the sputtering pressure is 0.3Pa , the grain size of ZnO films is larger, and the crystallinity increases.
出处 《渤海大学学报(自然科学版)》 CAS 2011年第1期31-33,共3页 Journal of Bohai University:Natural Science Edition
基金 辽宁省教育厅高等学校科研项目计划(No:120100003)
关键词 射频磁控溅射 ZNO薄膜 溅射气压 RF magnetron sputtering ZnO films sputtering pressure
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