摘要
为了实现GaN基量子阱红外探测器,利用自洽的薛定谔-泊松方法对GaN基多量子阱结构的能带结构进行了研究。考虑了GaN基材料中的自发极化和压电极化效应,通过设计适当的量子阱结构,利用自发极化和压电极化的互补作用,设计出了极化匹配的GaN基量子阱红外探测器,为下一步实现GaN基量子阱红外探测器做好了准备。
To realize GaN-based quantum well infrared photodetector, the energy band structures of GaN-based multiquantum well structures are researched using self-consistent Schro dinger-Poisson equations. Considering the spontaneous and piezoelectric polarization in GaN-based materials, polarization-matched GaN-based quantum well infrared photodectors are designed by utilizing the compensation effect between the spontaneous and piezoelectric polarization. It is very important to fabricate the devices in the next step.
出处
《现代电子技术》
2011年第10期208-210,共3页
Modern Electronics Technique
关键词
GAN
量子阱
红外探测器
极化匹配
GaN quantum well
infrared detector
polarization match
