摘要
利用氮离子注入技术改善SiO2 单晶表面的摩擦磨损性能,并用扫描电子显微镜研究了离子注入前、后的SiO2 单晶在干摩擦条件下与Si3N4 球对摩时的磨损机理.研究结果表明,经过1×1017 N+ /cm 2 剂量的氮离子注入后,SiO2 单晶表面的耐磨性能比注入前提高了近4 个数量级.氮离子注入使SiO2 单晶表层形成SiO2 微晶态与非晶态共存的混合态结构,其具有良好的抗塑变和塑性剪切能力,从而使SiO2 单晶的抗磨性能得到大幅度提高.
The tribological properties of N + implanted single crystal SiO 2 sliding against Si 3N 4 ball in dry air were investigated, the micro structure of the surfaces after friction was analyzed with SEM. The results show that N + implantation of single crystal SiO 2 at a dose of 1×10 17 N +/cm 2 increases the wear resistance by four order of magnitude. The mixed structure of micro crystal and amorphous SiO 2 is formed on the surface of single crystal SiO 2 after N + implantation. This contributes to increase the ability to resist plastic shear and raise the anti wear ability of single crystal SiO 2 greatly.
出处
《摩擦学学报》
EI
CAS
CSCD
北大核心
1999年第4期289-293,共5页
Tribology
基金
国家自然科学基金!(59702001)