摘要
异质结光敏晶体管(HPT)是一种具有内部电流增益的光电探测器,且与异质结双极晶体管(HBT)的制作工艺完全兼容。利用超高真空化学气相淀积(UHV/CVD)方法在HBT晶体管的基区和集电区间加入多层Ge量子点材料作为光吸收区。TEM和DCXRD测试结果表明,生长的多层Ge量子点材料具有良好的晶体质量。为了提高HPT的发射极注入效率,采用高掺杂多晶硅作为发射极,并制作出两端HPT型Ge量子点探测器。室温条件下的测试结果表明,HPT型量子点探测器具有低的暗电流密度和高的反向击穿电压。-8 V偏压下,HPT型量子点探测器在1.31μm和1.55μm处的响应度分别为4.47mA/W和0.11 mA/W。与纵向PIN结构量子点探测器相比,HPT型量子点探测器在1.31μm和1.55μm处的响应度分别提高了104倍和78倍。
Heterojunction phototransistor（HPT） can produce high current gain and its fabrication process is compatible with that of heterojunction bipolar transistor（HBT）.In this paper,a HPT-type Ge quantum dot photodetector with Ge-dot multilayers incorporated in the base-collector junction was grown by UHV/ CVD.TEM and DCXRD measurement showed good crystal quality of the material.Then a two-terminal HPT-type Ge quantum dot photodetector was fabricated to improve its emitter efficiency with a heavily doped polysilicon layer as the emitter.At room temperature,I-V measurement showed that the dark current density of the HPT-type Ge quantum dot photodetector was low and the breakdown voltage was high.Under-8 V bias,a photo-responsivity of 4.47 mA/W and 0.11 mA/W was achieved at 1.31 μm and 1.55 μm,respectively.Compared with a reference PIN detector with the same quantum dot layer,the responsivity was improved by a factor of 104 and 78 at 1.31 μm and 1.55 μm,respectively.
出处
《红外与激光工程》
EI
CSCD
北大核心
2011年第5期791-794,共4页
Infrared and Laser Engineering
基金
福建省自然科学基金(2009J05143)
福建省教育厅科研资助项目(JA09007)
福州大学科技发展基金(2009-XQ-31)
