摘要
综述了ONO(氧化物-氮化物-氧化物)反熔丝、非晶硅(a-Si)反熔丝和栅氧化层反熔丝的制作工艺、性能参数及其优缺点,介绍了反熔丝器件包括反熔丝可编程只读存储器(PROM)和反熔丝现场可编程门阵列(FPGA)在器件应用、存储容量、可用门数、工作电压和抗辐射性能等方面的研究进展,指出了反熔丝以及反熔丝器件的4个主要发展趋势,即工艺兼容、高密度、有机/柔性和新材料。
The ONO （oxide-nitride-oxide） antifuse, amorphous silicon （a-Si） antifuse and gate oxide antifuse are reviewed including their fabrication, characteristics, advantages and disadvantages. The antifuse based devices including antifuse programmable read only memory （PROM） and antifuse field programmable gate array （FPGA） are introduced containing their application, storage capacity, available gates, operating voltage, radiation-hardened proper- ties, and so on. Four future development trends and directions of the antifuses and their devices are proposed： compatibility of process, high density, organism/flexibility and new materials.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2011年第11期30-33,共4页
Materials Reports
基金
电子薄膜与集成器件国家重点实验室创新基金项目(CXJJ200905)
