摘要
本文借助于双晶ｘ 射线衍射（ Ｄ Ｃ Ｄ） 和椭园偏光谱（ Ｅ Ｓ） 研究了注入能量为１６０ｋｅ Ｖ．不同剂量和不同退火温度（５００ ～７００ ℃） Ａｓ ＋ 注入 Ｓｉ 的性质．用ｘ 射线衍射的动力学理论和多层模型拟合了双晶衍射的摇摆曲线，得到了晶格应变随深度的分布．结果表明，注入剂量１ ×１０１６ｃｍ － ２ ，退火温度６００ ℃形成了外延层．
The properties of As + implanted silicon with an energy 160 keV, different doses and annealing temperatures (500～700℃) were studied by means of x ray double crystal diffraction (DCD) and ellipometric spectra (ES). The rocking curves of DCD were simulated by multilayer model of dynamical theory, to obtain strain distributions as a function of depths. The 1×10 16 cm -2 annealed at 600℃ was found that a epitaxial layer was formed. The ES result proves above conclusion.The properties of As + implanted silicon with an energy 160 keV, different doses and annealing temperatures (500～700℃) were studied by means of x ray double crystal diffraction (DCD) and ellipometric spectra (ES). The rocking curves of DCD were simulated by multilayer model of dynamical theory, to obtain strain distributions as a function of depths. The 1×10 16 cm -2 annealed at 600℃ was found that a epitaxial layer was formed. The ES result proves above conclusion.
出处
《辽宁大学学报（自然科学版）》
CAS
1999年第3期228-232,共5页
Journal of Liaoning University：Natural Sciences Edition
