期刊文献+

基于电感耦合氧等离子体金刚石膜表面修饰的功率优化 被引量:2

Optimization of etching power for surface-modified diamond films based on inductively coupled oxygen plasma
原文传递
导出
摘要 采用电感耦合等离子体(ICP)氧等离子体刻蚀金刚石膜,探寻金刚石膜表面处理的方法。通过分析不同ICP射频源功率和不同偏压源功率下的刻蚀速率,研究了金刚石膜刻蚀的机理作用;通过拉曼光谱进行表征,分析刻蚀前后sp2与sp3的含量。结果表明,在ICP氧等离子体刻蚀的过程中,sp3键部分转化为sp2键;刻蚀后表面粗糙度降低;当刻蚀功率较高时,可同时刻蚀sp2和sp3键,而且刻蚀sp2的速率强于sp3。在刻蚀实验及机理探索基础上优化了刻蚀功率。 In this paper,the etching of diamond film is done by inductively coupled oxygen plasma to explore the treatment and modification methods for the diamond film surface.Based on the analysis with different etching rates under different inductively coupled plasma(ICP) RF source power values and bias RF source power values,the etching mechanism is explored.And the relative contents of sp2 and sp3 were characterized by Raman spectra.Etching results show that part of the sp3 bonds change into sp2 bonds during the etching process of diamond films by inductively coupled oxygen plasma,and the surface roughness is reduced after etching.When the diamond films are etched under high power,both sp2 and sp3 bonds are etched,and the etching rate of sp2 bonds is higher than that of the sp3 bonds.Finally the ICP power was optimized based on etching experiments and possible mechanism.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2011年第7期1034-1037,共4页 Journal of Optoelectronics·Laser
基金 国家自然基金资助项目(60806030) 天津市科技计划资助项目(08JCYBJC14600,10SYSYJC27700) 天津市高等学校科技发展基金计划资助项目(ZD200709)
关键词 金刚石薄膜 等离子体 电感耦合等离子体(ICP) 刻蚀 diamond films plasma inductively coupled plasma(ICP) etching
  • 相关文献

参考文献10

  • 1李晓伟,李翠平,杨保和.织构CVD金刚石附着膜残余应力分析[J].光电子.激光,2009,20(7):901-904. 被引量:6
  • 2高成耀,常明,李晓伟.Ta衬底B掺杂金刚石薄膜电极极化特性[J].光电子.激光,2009,20(4):479-483. 被引量:8
  • 3杨保和,崔建,熊瑛,陈希明,孙大智,李翠平.纳米金刚石薄膜的制备[J].光电子.激光,2008,19(5):625-627. 被引量:8
  • 4王海玲,郭霞,周跃平,沈光地.ICP刻蚀GaP研究及对LED性能的影响[J].固体电子学研究与进展,2008,28(1):154-157. 被引量:1
  • 5熊瑛,杨保和,吴小国,孙大智,李明,洪松.H_2-O_2混合气氛刻蚀制备金刚石纳米晶薄膜[J].光电子.激光,2006,17(7):794-797. 被引量:3
  • 6Lee C L,Gu E,Dawson M D,et al.Etching and micro-opticsfabrication in diamond using chlorine-based inductively-coupledplasma[].Diamond and Related Materials.2008
  • 7Kumaresan R,Umezawa H,Shikata S.Vertical structure schot-tky barrier diode fabrication using insulating diamond substrate[].Diamond and Related Materials.2010
  • 8Wiebke Janssen,Etienne Gheeraert.Dry etching of diamondnanowires using self-organized metal droplet masks[].Dia-mond and Related Materials.2011
  • 9Smirnov W,Kriele A,Yang N,et al.Aligned diamond nano-wires:Fabrication and characterisation for advanced applica-tions in bio-and electrochemistry[].Diamond and Related Materials.2010
  • 10D.S. Hwang T. Saito and N. Fujimori.New etching process for device fabrication using diamond[].Diamond and Related Materials.2004

二级参考文献38

  • 1欧阳钢,郭建,颜晓红.PLD法制备纳米类金刚石薄膜及衬底温度的影响[J].光电子.激光,2004,15(12):1456-1459. 被引量:4
  • 2王芳,杨保和.适用SAW器件的高C轴取向ZnO薄膜制备及性能分析[J].光电子.激光,2005,16(1):28-31. 被引量:8
  • 3熊瑛,杨保和,吴小国,孙大智,李明,洪松.H_2-O_2混合气氛刻蚀制备金刚石纳米晶薄膜[J].光电子.激光,2006,17(7):794-797. 被引量:3
  • 4[1]Vanderwater D A.Tan I H,Kish F A,et al.High-brightness AlGaInP light emitting diodes[J].Proceedings of the IEEE,1997,85(11):1 752-1 764.
  • 5[2]Gan Y,Zhang J,Deng L G,et al.Applications of ICP in optoelectronic device fabrication[C].Proc of SPIE,5624;152-160.
  • 6[3]Deng L G.Andrew Goodyear.Etching of Ⅲ-Ⅴ mater-ials using inductively coupled plasma (ICP) systems,Plasma Technology Process Newsletter,2004:2.
  • 7[4]Seung J Choi,Ramana Veerasingam.Simulations of BCl3/Cl2 plasma in an inductively coupled gaseous reference cell[J].J Vac Sci Technol,1998,A16(3):1 873-1 879.
  • 8[5]Lee J W,Donchue J F,Pearton S J,et al.Mechanism of high density plasma processes for ion-driven etching of materials[J].Solid-state Electronics,1999,43(9):1 769-1 775.
  • 9[6]Su C C,Hou H Q,Brian E,et al.identification of the volatile reaction products of the Cl2+GaAs etching rea-ction[J].JVacSciTechnol,1993,B11(4):1 222-1 242.
  • 10[7]Chapman B N,Minkiewicz V J.Flow rate effects in plasma etching[J].J Vac Sci Technol,1978,15(2):329-332.

共引文献18

同被引文献40

  • 1高成耀,常明,李晓伟.Ta衬底B掺杂金刚石薄膜电极极化特性[J].光电子.激光,2009,20(4):479-483. 被引量:8
  • 2王翔,余彦清,褚家如.二维微纳米结构表面反射特性的时域有限差分法模拟研究[J].光子学报,2012,41(2):159-165. 被引量:13
  • 3杨帆,路达.多层介质高反膜理论设计与光学特性分析[J].安阳师范学院学报,2005(2):21-24. 被引量:3
  • 4Elliott M A,May P W,Petherbridge J,et al.Optical emission spect roscopic studies of microwave enhanced diamond CVD using CH4/CO2plasmas[J].Diamond and Related Materia ls,2000,9:311-316.
  • 5Vandevelde T,Nesladek M,Quaeyhaegens C,et al.Optical emission s pectroscopy of the plasma during CVD diamond growth with nitrogen addition[J].Thin solid films,1996,290-291:143-147.
  • 6Zhou H Y,Watanabe J,Miyake M,et al.Optical and mass spectroscopy measurements of Ar/CH4/H2microwave plasma for nano-crystalline diamond film deposition[J ].Diamond & Related Material,2007,16:675-678.
  • 7Vandevelde T,Nesladek M,Quaeyhaegens C,et al.Optical emission s pectroscopy of the plasma during CVD diamond growth with nitrogen addition and relation to the thin film morpholo gy[J].Thin solid films,1997,308-309:154-158.
  • 8Liao Y,Li C H,Ye Z Y,et al.Analysis of optical emission spect roscopy in diamond chemical vapor deposition[J].Diamond and Related Materials,2000,9:1716-1721.
  • 9Larijani M M,Normand F L,Cregut O.An optical em ission spectroscopy study of the plasma generated in the DC HF CVD nucleation of diamond[J].Applied Surface Science,2007,253:4051-4059.
  • 10Rishi Sharma,Nicolas Woehrl,Milan Vrucinnic,et a l.Eff-ect of microwave power and C2emission intensity on structural and surface properties of nanocrystalline diamond films[J].Thin solid films,2011,519:7632-7637.

引证文献2

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部