摘要
利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020cm-3,电子迁移率和电阻率分别为17.22 cm2 V-1s-1和2.867×10-5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.
Under room temperature,ZnSe/Ag/ZnSe transparent conducting film was fabricated by electron beam evaporation based on infrared material ZnSe and metal Ag.The ZnSe/Ag/ZnSe film has the electron density of 1.208×1020 cm-3,the electron mobility of 17.22 cm2V-1s-1,the resistivity of 2.867×10-5 Ω·cm,and the work function is 5.13 eV.The ZnSe/Ag/ZnSe film shows an average visible transmittance of more than 80% by theoretical modeling and 63.8% by measurement.The maximum measured transmittance of 83% can be obtained.The results indicates that ZnSe/Ag/ZnSe film has good optical and electrical properties that can be used as transparent electrode in optoelectronic devices.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2011年第6期857-859,共3页
Acta Photonica Sinica
基金
中国科学院知识创新工程项目(No.20060615A)
吉林省科技发展计划项目(No.20090346
No.20100570)资助
