摘要
采用Ｓｏｌ－ｇｅｌ方法制备了ＧｅＯ２－ＳｉＯ２复合薄膜，并用Ｈ２／Ｎ２还原使得ＧｅＯ２转变成Ｇｅ微晶而镶嵌在ＳｉＯ２的玻璃网格中，其平均晶粒尺寸小于４ｎｍ 。随着热处理时间的增加，２４０ｎｍ 处吸收峰的强度随之增大，并且其吸收边产生红移，说明Ｇｅ
Germanosilicate thin films are fabricated by using the Sol\|gel technique.Ge microcrystals were successfully imbeded in SiO\-2 glass films by hydrogen\|treated the GeO\-2\|SiO\-2 films.The average size of Ge microcrystals on different substrates and annealing time was disscussed.With increasing heat treatment time,the 240nm absorption peak (associated with oxygen\|deficient germaina centers) was linearly increased and the absorption edges shifteded to higher wavelength.\;
出处
《材料科学与工程》
CAS
CSCD
1999年第4期14-16,共3页
Materials Science and Engineering
