摘要
目前808nm高效率激光二极管产品的转换效率只有50%左右,还有很大的提升空间。通过提高欧姆接触层浓度、界面渐变和波导层掺杂等方面的外延材料结构优化,减小附加电压和电阻值,设计制作了808nm大光腔应变量子阱外延材料;并制作了200μm发光区标准单管,提取了材料内部参数,材料内损耗iα为0.67cm-1,内量子效率iη为0.88;将圆片解理成2mm腔长的巴条进行腔面镀膜,并烧结成标准单管,25℃下单管电光效率达到61.1%;将巴条烧结到微通道载体上,制作成标准微通道水冷单条阵列,水温15℃110A下输出光功率126.6W,电光转换效率62.77%。
The product conversion efficiency of 808 nm high efficiency laser diodes now is only about 50%,and can be further improved.By optimizing semiconductor laser material epitaxial structure for increasing the concentration of ohm contact layer,interface gradual change and the doping of the wave-guide layer to reduce the additional voltage and resistance value,the 808 nm large optical cavity（LOC）strain quantum well was designed and fabricated.The diodes with 200 μm luminescene zone were fabricated,and the interior parameters of the material were extracted.The inner loss（αi） is 0.67 cm-1 and the internal quantum efficiency（ηi） is 0.88.With filming the 2 mm cavity length bars and bonding to be the standard single diodes,the conversion efficiency of the single diode is 61.1% at 25 ℃.With bonding the bars on the microchannel car-riers and making the standard microchannel water-cooling arrays,the light power is 126.6 W and conversion efficiency is 62.77% at 15 ℃ water temperature and 110 A current.
出处
《微纳电子技术》
CAS
北大核心
2011年第7期418-421,共4页
Micronanoelectronic Technology
