摘要
研究了不同价态Co、Mn添加物对低压ZnO压敏陶瓷晶粒生长和电学性能的影响，分析了由于不同价态Mn和Co掺杂所产生的缺陷类型，应用晶粒生长的动力学方程：确定了晶粒生长的动力学指数和激活能．实验结果表明：对于低压ZnO压敏陶瓷，其晶粒生长的动力学指数n＝6，激活能E＝224±17kJ／mol，随着Mn、Co价态的增加，ZnO压敏陶瓷的平均晶粒大小增加，提高烧结温度，ZnO压敏陶瓷的压敏场强E1mA降低，漏电流IL增加，非线性系数α降低．在低压ZnO压敏陶瓷的制备过程中，烧结温度以不超过1250℃为宜．
Grain growth and electrical properties in ZnO system with various valence states of manganese and cobalt were studied. The results were discllssed by means of defects produced by the additions. The grain growth was analyzed from the kinetic grian growth equation: Gn =Dtexp(-E/RT). The results show that the grain growth kinetic exponent n is 6 and activation energy is 224±17kJ/mol. The grain size increases with the valence states of manganese and cobalt.Raising the firing temperatures can decrease the breakdown voltage, but the leakage current will increase and its nonlinear coefficient will decline when the firing temperature is too high. In general,the firing temperature is ndt exceed 1250℃.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第6期921-926,共6页
Journal of Inorganic Materials
