摘要
该文从泊松方程、连续性方程和晶格热方程出发,采用商用TCAD软件建立AlGaN/GaNHEMT器件二维模型。针对自加热效应,在不同的直流偏置电压下,对AlGaN/GaN HEMT器件进行了二维数值分析,获得相应的热形貌分布。
Based on the Poisson equation,continuity equation and lattice thermal equation,with the aid of the commercial TCAD software,a two-dimensional numerical model of AlGaN/GaN HEMT is built.The temperature profiles caused by self-heating effect under a wide range of bias condition are presented.
基金
国家重点实验室开发基金资助项目(KYH043110023)
