摘要
A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.
设计了一款微波单片集成电路功率放大器.该放大器采用了一种新颖的在片偏置电路技术,不仅避免了由于电源和温度变化导致的直流偏置点的不稳定,而且补偿了由于输入信号增大所引起的交流偏置点的偏离.电流镜结构的偏置电路与反馈电路使偏置电压维持在一个稳定的状态,在反馈电路中引入一个非反相电路提高了电路增益.通过在偏置管的基极并联一个电容进一步改善了功率放大器的线性.该芯片采用InGaP/GaAsHBT工艺制作.测试结果表明:该放大器具有26.6dBm的输出压缩点,对于W-CDMA应用,放大器的效率为33.6%,ACPR为-40.2dBc.
基金
The National High Technology Research and Development Program of China(863 Program)(No.2009AA01Z260)
