摘要
带隙基准电压源是各类模拟，数模混合集成电路中的基础性部件，其性能直接决定了整体电路的稳定性。CMOS工艺中的衬底三极管的放大倍数β较小，“发射极一基极”通路对三极管的集电极电流的分流作用十分显著，导致带隙基准温度稳定性下降。此外，低电压条件下的电路缺乏足够的电压裕度，电源噪声的影响已经不可忽略，基准源的抗电源噪声能力亟待加强。针对上述两个问题，分别提出了自适应的“发射极一基极”电流补偿技术和使用电容直接耦合电源噪声负反馈的方案。基于0．18μMCMOS工艺的实现结果表明，在一55℃～150℃范围内，电源电压1．8V情况下，输出基准电压的温度系数可达8．2ppm／℃，且中，高频段的电源抑制比得到大幅度提高，直流段电源抑制比更可达一90dB。
Bandgap reference is a fundamental component in modem analog/mixed signal integrated circuits. In CMOS process, because of the small β value, the base-emitter path of the bipolar junction transistor has a significant streaming effect on the collector current, which leads to a large drift on temperature for the bandgap reference. In this study, a current compensating technique is proposed to enhance the temperature stability of the bandgap reference, and the power supply rejection is improved with a noise feedback circuit. Experimental results in the 0.18μm CMOS process show that the temperature coefficient is 8.2ppm/℃ within the temperature range of - 55℃ - 150℃ on the 1.SV power supply, and the power supply rejection is greatly improved, the DC power supply rejection ratio is - 90dB.
出处
《国防科技大学学报》
EI
CAS
CSCD
北大核心
2011年第3期89-94,共6页
Journal of National University of Defense Technology
基金
教育部新世纪优秀人才支持计划资助(NCET)
关键词
带隙基准电压源
集电极电流
温度稳定性
电源抑制比
低电源电压
bandgap voltage reference
collector current
temperature stability
power supply rejection ratio
low voltage power supply
