摘要
提出一种新型的制备CdTe太阳电池背接触方法。利用碳糊成膜法,将含Cu、Te的CdCl2浆状悬浊液涂覆在CdTe表面,只进行一次后退火,X射线衍射(XRD)、二次质子谱(SIMS)测试发现,就能同时达到CdCl2后处理的作用、形成CuxTe的缓冲层和降低背接触势垒的目的。实验结果表明,本文方法将传统的CdCl2后处理和形成CuxTe缓冲层工艺合二为一,制备的CdTe太阳电池含较好控制了的Cu扩散,提高了电池性能;且制备工艺简单易行,可以较显著地降低成本,适合大面积生产。
A new method to prepare CdTe solar cell based on the carbon-paste film forming is introduced in this article. According to the analysis by XRD and SIMS spectrum,it was indicated that this technology integrates deposition of the back contact and CdC12 treatment into one process, which can not only form CuxTe layer but also activate with CdC12 simultaneously. In addition,it can control the diffusion of Cu,which could increase the efficiency. This simple method has the possible application in CdTe solar cell industry.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第8期1157-1161,共5页
Journal of Optoelectronics·Laser
基金
国家"863"计划资助项目(2004AA303570)
国家重点自然科学基金资助项目(60437030)
