摘要
为了考察商用CMOS图像传感器应用于空间的可行性,对进行了空间辐射环境模拟实验研究。实验采用60Co-γ辐射源模拟空间辐射环境,辐射最大剂量为5×104rad(Si),辐射速率为1 Gy/s。在辐照时,根据实验需要在CMOS两端加偏置电压或不加偏置电压,并采用在线和离线测量相结合的方法。实验结果表明:辐射初期各项性能指标变化不大,均匀度不变,暗电流略有增加,辐射停止一段时间后,性能下降较为明显,但经过较长时间退火后,性能渐趋稳定,且有一定恢复。研究表明:在采取一定防护措施后,商用CMOS像传感器可以应用在空间辐射环境中。
In order to test whether the commercial CMOS image sensor is available for space environment,a CMOS active pixel sensor was evaluated with Co60 irradiation.The total dose was 5×104 rad（Si）,and the dose rate was 1 Gy/s.The CMOS image sensor were divided into different groups with or without the bias voltage,and the dark current were measured when they were on line or off line.There was no big difference at the beginning of radiation,and the non-uniformity of dark output was zero.When the total dose of 5×104 rad（Si） arrived,the dark current increased,and the non-uniformity of dark output was no longer zero.After a long period of annealing,the degradation would recover in a degree and be stable.It proves that the commercial CMOS image sensor can be used in the space environment with reasonable protection.
出处
《红外与激光工程》
EI
CSCD
北大核心
2011年第7期1270-1273,共4页
Infrared and Laser Engineering
基金
国家科技支撑计划(2009BAK58B03)
