摘要
针对目前铜线封装对芯片压焊块的铝层厚度要求较高的问题,通过改进芯片制造工艺流程,对芯片内部压焊块的铝层进行单独地加厚。以便同时满足芯片封装厂采用铜线打线和芯片制造厂金属刻蚀工艺难易的要求。做法为,在钝化层刻蚀完成后,再生长一层足够厚的金属层,进行钝化层反版的光刻以及湿法刻蚀,只保留下压焊块区域的金属层,此时压焊块区域就有两层叠加的金属层,完全满足打铜线封装的要求。
Compare to use Au bonding wire,more thickness Aluminum layer is necessary when using Cu bonding wire.We can meet this by improve process flow.On the one hand,we reinforce the aluminum layer of PAD,on the other hand,what we did do not impact on process of metal etch.Firstly,metal been sputtered after etching passivation layer.Secondly,metal layer photo and wet etch been proceeded by using inverse mask of passivation.Thus,double metal come into being at the location of pad.It is able to fulfill the requirement for Cu bonding wire.
出处
《电子工业专用设备》
2011年第7期40-43,共4页
Equipment for Electronic Products Manufacturing
关键词
铜线封装
压焊块
溅射
钝化层
反版
Cu wire Package
PAD
Sputter
Passivation
Inverse mask
