摘要
采用LP-MOCVD方法生长并制作了GaAs基底肖特基势垒的MSM光电自混频器件。器件为面阵式结构,象元数目为32×32。对器件的光电参数进行测试分析,器件的响应度在偏压为3 V时,达到8.25 A/W,暗电流小于18 nA,对应的光电流密度为59.1μA/cm2,单点饱和输入光功率为1μW。测试瞬态响应,器件响应峰值上升沿为212 ps,半峰宽372 ps,对应响应频率大于1.65 GHz,具有很好的应用前景。
This paper reports a metal-semiconductor-metal（MSM）Schottky photodiode（MSM-PD）array as an optoelectronic self-mixer factured on the extension layer which is grown on GaAs by using low pressure metal organic chemical vapor deposition（LP-MOCVD）method.There are 32×32 pixels in the device.Measured at 3 V biasing voltage,the responsivity of the device is 8.25 A/W,the dark current is under 18 nA,the consistency of photocurrent is 59.1 μA/cm2 and the input saturated power of light is 1 μW.Measuring the response to pulses,the risetime is 212 ps and the Full Wave at Half Maximum（FWHM）is 372 ps,so the corresponding 3-dB bandwidth is 1.65 GHz.
出处
《激光与红外》
CAS
CSCD
北大核心
2011年第8期925-928,共4页
Laser & Infrared
基金
国家自然科学基金(No.60707018)
西部之光(No.2005ZD01)资助
