摘要
针对制导等应用领域对紫外探测器的需求,介绍了一种CdS半导体紫外探测器研制过程及取得的进展,叙述了器件的工作原理和制作工艺,并针对器件的响应率及量子效率等性能进行了测试,测试结果表明,该器件在探测波长410 nm的光线时,量子效率最高达到了44.5%。
Research progress of CdS semiconductor ultraviolet detector that been used in military field is presented.The performances of detectors are introduced.An introduction of the work principle and fabricated technology of the detectors are made.The performance of the detector such as the responsibility and quantum efficiency have been tested.The results show that the quantum efficiency of the device is as high as 44.5% at 410 nm wavelength.
出处
《激光与红外》
CAS
CSCD
北大核心
2011年第8期929-931,共3页
Laser & Infrared
