摘要
利用真空蒸发的方法制备ZnSe多晶薄膜,并采用双源法对薄膜进行了Dy的掺杂。用XRD、紫外可见分光光度仪对薄膜的性质进行了表征。结果表明,当Zn、Se原子配比为0.9∶1时可制备较理想的ZnSe多晶薄膜,稀土Dy掺杂并未改变样品的物相结构,但掺杂使薄膜的晶格常数及晶胞体积略有增大,还使得薄膜的晶粒尺寸及压应力变小,掺杂后薄膜的光透射性得到改善。
ZnSe thin films were prepared by vacuum evaporation on glass substrate. A dysprosium doping was made in the thin films by double - source evaporation . The films were characterized with XRD and UV speetrophotometer. The result showed that the ZnSe thin films were the best when Zn： Se = 0.9： 1. Dy doping improved their optical transmission, did not change the sample＇s crystal structure, enhanced their lattice constant and crystal cell volume, and minished its grain size and internal stress.
出处
《稀土》
EI
CAS
CSCD
北大核心
2011年第3期60-63,共4页
Chinese Rare Earths
基金
内蒙古教育厅项目(09006)
关键词
ZnSe薄膜
微结构
真空蒸发
掺杂
ZnSe thin films
microstructure
vacuum evaporation
doping
