摘要
概述了非晶硅薄膜的金属诱导晶化原理,介绍了Al,Ni两种金属诱导非晶硅薄膜晶化的一般规律,详细探讨了金属诱导条件下非晶硅薄膜的本质晶化机理,旨在为非晶硅薄膜的低温成核、晶化机理研究和多晶硅薄膜的研发制备提供实验支持与理论参考。
The crystallization theory of amorphous silicon film by metal induced was briefly reviewed. The general rules of A1 and Ni induced amorphous silicon film crystallization were described and the nature mechanism of metal induced amorphous silicon film crystallization was discussed. It is expected to provide experimental support and theoretical reference to study low temperature nucleation and crystallization mechanism of silicon films and fabricate polycrystalline silicon films.
出处
《表面技术》
EI
CAS
CSCD
北大核心
2011年第5期97-100,共4页
Surface Technology
关键词
非晶
硅薄膜
诱导晶化
amorphous
silicon films
induced crystallization
