摘要
通过对不同偏压条件对光耦合器总剂量辐照效应的影响进行研究,结果发现随着总剂量的增加,光耦合器电流转换率CTR会降低60%～80%,且输入低电流时光耦合器总剂量辐照损伤更严重,其原因可能是输入低电流时光耦合器内部发光二极管辐照过程中更容易产生非发光陷阱所致。
The total dose irradiation effect of optical couplers with different bias was studied.It was indicated that the current transfer rate（CTR）was decreased about 60% to 80% when irradiation total dose increased and the worst bias was the bias with lower input current（IF）.This was probably related to increased non-luminescent trapped charges induced by irradiation in LED of optical couplers when IF was lower.
出处
《电子器件》
CAS
2011年第5期511-513,共3页
Chinese Journal of Electron Devices
基金
国家微电子预研项目(51308040403)
关键词
可靠性
辐照
总剂量
光耦合器
偏置条件
reliability
irradiation
total dose
optical coupler
radiation bias
