摘要
从重掺衬底硅单晶片上生长外延层的杂质来源入手,通过分析不同杂质源的控制方法,来更好地控制外延层的电阻率径向分布均匀性。对于电阻率径向均匀性要求非常高的外延片来讲,仅靠控制主掺杂质源是无法实现的,必须要采取措施对自掺杂质进行控制。因此提出了多种抑制自掺杂质的方法,包括优选衬底、气相抛光、衬底背封、二步外延、减压外延等。
Epitaxial（Epi）In this paper,sources of impurities of heavily doped Si substrate were specially provided at first,and investigated the method of increasing resistivity radial distribution of Epitaxial（Epi） by controlling the different sources of impurities in substrate.For the Epi growing with perfect radial distribution of resistivity,it′s too difficulty to implement only by controlling main dopant,and it′s very important to control epi autodoping dopant coming from heavily doped Si substrate.Several methods were proposalled,such as substrate-control,gas-polish,back-seal,two step-Epi,decompression-Epi etc.
出处
《电子工业专用设备》
2011年第10期1-3,44,共4页
Equipment for Electronic Products Manufacturing
关键词
杂质
气相自掺杂
杂质分布
衬底
重掺
Impurity
Gas phase from blend
Impurity distribution
Substrate
Heavily doped
