摘要
集成电路用12英寸硅单晶生长过程中,为满足晶体生长界面附近温度梯度的要求,需要测量并控制晶体生长过程中硅熔体液面位置。传统的设定坩埚上升速度和激光测距的方法有时不能适应直拉硅单晶生长技术的发展。本文提出并实现了一种采用CCD图像捕捉和测量液面位置的方法,结合调节坩埚上升速度来控制液面高度,最终可以满足生长集成电路用12英寸硅单晶的需要。
During 12 inch silicon single crystal growth for IC,the silicon melt level has to be controlled to meet the requirements on temperature gradient near the interface.Such traditional methods as setting CL/SL（CL is the crucible lift rate,SL is the seed lift rate） and laser distance measurement can not meet the requirement of CZ silicon crystal growth in some case.In this article,the melt level is measured by capturing the reflected image of the reference using CCD,and the melt level is controlled by adjusting the crucible lift rate,this technology can finally meet the requirement of 12 inch silicon crystal growth.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2011年第5期1343-1347,1352,共6页
Journal of Synthetic Crystals
基金
国家科技重大专项(2009ZX02011)
关键词
直拉法
硅单晶
液面位置
CZ
silicon single crystal
melt level
