摘要
主要研究第三代半导体AlGaN/GaN功率管内匹配问题。采用8个2.5 mm GaN功率芯片设计、合成以及内匹配电路的测试,在漏极电压40 V,脉冲占空比10%,脉宽100μs的条件下进行功率匹配,实现了GaN功率HEMT在X波段8 GHz 140 W功率输出的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50Ω,功率增益大于6 dB,功率附加效率达到28.66%,输出功率密度高达7 W/mm。
The paper researches the AlGaN/GaN internal matching technology.Using in-house made eight 2.5 mm GaN power HEMT transistors,the internal matching transistor demonstrates an output pluse power of more than 140 W with a power gain of over 6 dB,PAE of 28.66% at 8 GHz,operating at 40 V drain bias voltage with the plused conditions at a duty of 10% with a pulse width of 100 μs.In this case,the HEMT has the output power density as high as 7 W/mm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第5期442-444,493,共4页
Research & Progress of SSE
