摘要
对物理冶金法提纯的低成本多晶硅材料进行了磷吸杂实验研究,结果表明,950℃下时吸杂4h去杂效果最好,对磷吸杂机理进行了定性的分析和讨论。把去除吸杂层与制备绒面工艺结合起来,达到较好的效果,节省了太阳电池制备的时间和成本。
Phosphorus（P） gettering experiments were carried out to study multicrystalline silicon wafers purified by physical metallurgy method.It is found that the best results of P gettering was achieved at 950 ℃ for 4 hours.The mechanism for P gettering is analysed and discussed.Combined the texturing process with removing the gettering layer,a better result can be obtained,saveing time and cost for the fabrication of solar cells.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第5期668-671,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61076056)
福建省重大专项资助项目(2007HZ005-2)
关键词
物理冶金法
多晶硅
少子寿命
磷吸杂
physical metallurgy process
multicrystalline silicon
minority carrier lifetime
P gettering
