摘要
In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.
In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.
